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2SC3649T-TD-E

MFR #2SC3649T-TD-E

FPN#2SC3649T-TD-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 160 V 1.5 A 120MHz 500 mW Surface Mount PCP
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Multiples of: 1000more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SC3649
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth120MHz
Life Cycle StatusActive
Maximum Collector Current1.5A
Maximum Collector Emitter Breakdown Voltage160V
Maximum Collector Emitter Saturation Voltage450mV @ 50mA, 500mA
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation500mW
Minimum DC Current Gain200 @ 100mA, 5V
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 49% from Suppliers use this Dimension
Package TypeSOT-89/PCP-1
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle