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onsemi

2SB1216S-TL-E

MFR #2SB1216S-TL-E

FPN#2SB1216S-TL-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount, TO-252-3
Datasheet
63261-Datasheet
Quote Onlymore info
Multiples of: 700more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SB1216
Packaging TypeTape and Reel
Packaging Quantity700
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Package TypeDPAK/TP-FA
ConfigurationPNP
Gain Bandwidth130MHz, 180MHz
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum DC Current Gain280 @ 500mA, 5V
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain140 @ 500mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle