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onsemi

2SB1215T-E

MFR #2SB1215T-E

FPN#2SB1215T-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole, TO-251-3
Datasheet
36239-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SB1215
Packaging TypeBag
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth130MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage500mV @ 150mA, 1.5A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain200 @ 500mA, 5V
Minimum Operating TemperatureN/A
Package TypeTP
Technology TypeN/A
Transistor TypeSingle