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2SB1204T-E

MFR #2SB1204T-E

FPN#2SB1204T-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 50 V 8 A 130MHz 1 W Through Hole TP
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Multiples of: 500more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SB1204
Packaging TypeBulk
Packaging QuantityN/A
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth130MHz
Life Cycle StatusObsolete
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 4A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain200 @ 500mA, 2V
Minimum Operating TemperatureN/A
Package TypeTP
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle