2SB1202S-E
MFR #2SB1202S-E
FPN#2SB1202S-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 50 V 3 A 150MHz 1 W Through Hole TP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SB1202 |
Packaging Type | Bulk |
Packaging Quantity | 500 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Compliant |
Configuration | PNP |
Gain Bandwidth | 150MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 50V |
Maximum Collector Emitter Saturation Voltage | 700mV @ 100mA, 2A |
Maximum Cutoff Collector Current | 1µA (ICBO) |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1W |
Minimum DC Current Gain | 140 @ 100mA, 2V |
Minimum Operating Temperature | N/A |
Package Type | IPAK / TP |
Technology Type | N/A |
Transistor Options | N/R |
Transistor Type | Single |