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2SB1202S-E

MFR #2SB1202S-E

FPN#2SB1202S-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 50 V 3 A 150MHz 1 W Through Hole TP
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Multiples of: 500more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SB1202
Packaging TypeBulk
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth150MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage700mV @ 100mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain140 @ 100mA, 2V
Minimum Operating TemperatureN/A
Package TypeIPAK / TP
Technology TypeN/A
Transistor OptionsN/R
Transistor TypeSingle