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2SA2013-TD-E

MFR #2SA2013-TD-E

FPN#2SA2013-TD-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W Surface Mount PCP
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Multiples of: 1000more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SA2013
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth360MHz
Life Cycle StatusActive
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage340mV @ 100mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation3.5W
Minimum DC Current Gain200 @ 500mA, 2V
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 49% from Suppliers use this Dimension
Package TypeSOT-89/PCP-1
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle