2SA2013-TD-E
MFR #2SA2013-TD-E
FPN#2SA2013-TD-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W Surface Mount PCP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SA2013 |
Packaging Type | Tape and Reel |
Packaging Quantity | 1000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 360MHz |
Life Cycle Status | Active |
Maximum Collector Current | 4A |
Maximum Collector Emitter Breakdown Voltage | 50V |
Maximum Collector Emitter Saturation Voltage | 340mV @ 100mA, 2A |
Maximum Cutoff Collector Current | 1µA (ICBO) |
Maximum Emitter Base Voltage | 6V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 3.5W |
Minimum DC Current Gain | 200 @ 500mA, 2V |
Minimum Operating Temperature | N/A |
PK Package Dimensions Note | Popular package size 49% from Suppliers use this Dimension |
Package Type | SOT-89/PCP-1 |
Technology Type | SI |
Transistor Options | N/R |
Transistor Type | Single |