
2SA1962RTU
MFR #2SA1962RTU
FPN#2SA1962RTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | 2SA1962 | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | 30MHz | 
| Life Cycle Status | Obsolete | 
| Maximum Collector Current | 17A | 
| Maximum Collector Emitter Breakdown Voltage | 250V | 
| Maximum Collector Emitter Saturation Voltage | 3V @ 800mA, 8A | 
| Maximum Cutoff Collector Current | 5µA | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 130W | 
| Minimum DC Current Gain | 55 @ 1A, 5V | 
| Minimum Operating Temperature | -50°C (TJ) | 
| Package Type | TO-3PN | 
| Technology Type | SI | 
| Transistor Type | Single | 
