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2N7002ET1G
onsemi

2N7002ET1G

MFR #2N7002ET1G

FPN#2N7002ET1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
Datasheet
36186-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N7002E
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance40pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current260mA (Ta)
Maximum Drain to Source Resistance2.5 Ohm @ 240mA, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW (Tj)
Maximum Pulse Drain Current1.2A
Maximum Total Gate Charge810pC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge80pC
Typical Gate to Source Charge480pC