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2N7000BU
onsemi

2N7000BU

MFR #2N7000BU

FPN#2N7000BU-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole, TO-226-3
Datasheet
136934-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N7000BU
Packaging TypeBulk
Packaging QuantityN/A
Lifecycle StatusActive (Unconfirmed)
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance30pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current200mA (Tc)
Maximum Drain to Source Resistance5 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage3.9V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation400mW (Tc)
Maximum Pulse Drain Current1A
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-92-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A