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2N7000
onsemi

2N7000

MFR #2N7000

FPN#2N7000-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole, TO-226-3
Datasheet
36179-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N7000
Packaging TypeBulk
Packaging Quantity10000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance50pF
Input Capacitance Test Voltage25V
Junction to Case Thermal ResistanceN/A
Life Cycle StatusActive
Maximum Continuous Drain Current200mA (Tc)
Maximum Drain to Source Resistance5 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation400mW (Tc)
Maximum Pulse Drain Current500mA
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-92
Single Pulse Avalanche EnergyN/A
TechnologyMOSFET (Metal Oxide)
Technology TypeN/A
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A