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2N6667G
onsemi

2N6667G

MFR #2N6667G

FPN#2N6667G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 60 V 10 A 2 W Through Hole TO-220
Datasheet
36177-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N6667
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage60V
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage3V @ 100mA, 10A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation65W
Minimum DC Current Gain1000 @ 5A, 3V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle