2N6036G
MFR #2N6036G
FPN#2N6036G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole TO-126
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2N6036G |
| Packaging Type | Bulk |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | PNP - Darlington |
| Gain Bandwidth | N/A |
| Life Cycle Status | Obsolete |
| Maximum Collector Base Voltage | 80V |
| Maximum Collector Current | 4A |
| Maximum Collector Emitter Breakdown Voltage | 80V |
| Maximum Collector Emitter Saturation Voltage | 3V @ 40mA, 4A |
| Maximum Cutoff Collector Current | 100µA |
| Maximum Emitter Base Voltage | 5V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 40W |
| Minimum DC Current Gain | 750 @ 2A, 3V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-225-3 |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |