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2N6036G
onsemi

2N6036G

MFR #2N6036G

FPN#2N6036G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole TO-126
Datasheet
36167-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N6036G
Packaging TypeBulk
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage80V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage3V @ 40mA, 4A
Maximum Cutoff Collector Current100µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation40W
Minimum DC Current Gain750 @ 2A, 3V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle