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2N5551TFR
onsemi

2N5551TFR

MFR #2N5551TFR

FPN#2N5551TFR-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet
36164-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N5551
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863)
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth300MHz
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage160V
Maximum Collector Emitter Saturation Voltage200mV @ 5mA, 50mA
Maximum Cutoff Collector Current50nA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation625mW
Minimum DC Current Gain80 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-92
Technology TypeN/A
Transistor OptionsN/R
Transistor TypeSingle