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2N5551TFR
onsemi

2N5551TFR

MFR #2N5551TFR

FPN#2N5551TFR-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet
36164-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N5551
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Package TypeTO-92
ConfigurationNPN
Gain Bandwidth300MHz
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage160V
Maximum Collector Emitter Saturation Voltage200mV @ 5mA, 50mA
Maximum Cutoff Collector Current50nA (ICBO)
Maximum DC Current Gain250 @ 10mA, 5V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation625mW
Minimum DC Current Gain80 @ 10mA, 5V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle