_medium_204x204px.png)
2N5550TAR
MFR #2N5550TAR
FPN#2N5550TAR-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2N5550 |
Packaging Type | Fan-Fold |
Packaging Quantity | 2000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Configuration | NPN |
Gain Bandwidth | 300MHz |
Life Cycle Status | Active |
Maximum Collector Current | 600mA |
Maximum Collector Emitter Breakdown Voltage | 140V |
Maximum Collector Emitter Saturation Voltage | 250mV @ 5mA, 50mA |
Maximum Cutoff Collector Current | 100nA (ICBO) |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 625mW |
Minimum DC Current Gain | 60 @ 10mA, 5V |
Minimum Operating Temperature | N/A |
Package Type | TO-92 |
Technology Type | SI |
Transistor Options | N/R |
Transistor Type | Single |