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2N5550TAR

2N5550TAR

MFR #2N5550TAR

FPN#2N5550TAR-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3
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Multiples of: 2000more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N5550
Packaging TypeFan-Fold
Packaging Quantity2000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth300MHz
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage140V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 50mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation625mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Operating TemperatureN/A
Package TypeTO-92
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle