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2N4919G
onsemi

2N4919G

MFR #2N4919G

FPN#2N4919G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 60 V 1 A 3MHz 30 W Through Hole TO-126
Datasheet
36158-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N4919
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth3MHz
Life Cycle StatusObsolete
Maximum Collector Current1A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage600mV @ 100mA, 1A
Maximum Cutoff Collector Current500µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation30W
Minimum DC Current Gain40 @ 50mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle