2N4919G
MFR #2N4919G
FPN#2N4919G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 60 V 1 A 3MHz 30 W Through Hole TO-126
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2N4919 |
| Packaging Type | Bulk |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant, Compliant with Exemption |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | PNP |
| Gain Bandwidth | 3MHz |
| Life Cycle Status | Active |
| Maximum Collector Current | 1A |
| Maximum Collector Emitter Breakdown Voltage | 60V |
| Maximum Collector Emitter Saturation Voltage | 600mV @ 100mA, 1A |
| Maximum Cutoff Collector Current | 500µA |
| Maximum Emitter Base Voltage | 5V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 30W |
| Minimum DC Current Gain | 40 @ 50mA, 1V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-225-3 |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |