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Infineon

BSS84PW H6327

MFR #BSS84PW H6327

FPN#BSS84PW H6327-FL

MFRInfineon

Part DescriptionMOSFET P-Channel 60V 150mA (Ta) SOT-323 T/R

Legacy ManufacturerCypress Semiconductor

Datasheet
40059-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSS84PW
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage2.7V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance19.1pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current150mA (Ta)
Maximum Drain to Source Resistance8 Ohm @ 150mA, 10V
Maximum Gate to Source Threshold Voltage2V @ 20µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation300mW (Ta)
Maximum Pulse Drain Current600mA
Maximum Total Gate Charge1.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypePG-SOT323-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge300pC
Typical Gate to Source Charge250pC