
1HN04CH-TL-W
MFR #1HN04CH-TL-W
FPN#1HN04CH-TL-W-FL
MFRonsemi
Part DescriptionN-Channel 100 V 270mA (Ta) Surface Mount 3-CPH
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | 1HN04CH | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 100V | 
| Drive Voltage | 4V, 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 15pF | 
| Input Capacitance Test Voltage | 20V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 270mA (Ta) | 
| Maximum Drain to Source Resistance | 8 Ohm @ 140mA, 10V | 
| Maximum Gate to Source Threshold Voltage | 2.6V @ 100µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 600mW (Ta) | 
| Maximum Pulse Drain Current | 1.08A | 
| Maximum Total Gate Charge | 900pC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | N/A | 
| Minimum Operating Temperature | N/A | 
| Package Type | 3-CPH | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 260pC | 
| Typical Gate to Source Charge | 190pC | 
