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TIP107G
onsemi

TIP107G

MFR #TIP107G

FPN#TIP107G-FL

MFRonsemi

Part DescriptionDarlington Bipolar (BJT) Transistor PNP 100V 8A 2W Through Hole, TO-220-3
Datasheet
61825-Datasheet
Quote Only
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Multiples of: 50
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameTIP107
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a) 7(c)-I, RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-220-3
ConfigurationPNP - Darlington
Gain BandwidthN/A
Maximum Collector Base Voltage100V
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage2.5V @ 80mA, 8A
Maximum Cutoff Collector Current50µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation2W
Minimum DC Current Gain1000 @ 3A, 4V
Minimum Operating Temperature-65°C (TJ)
Technology TypeSI
Transistor TypeSingle