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STDV5804NT4G
onsemi

STDV5804NT4G

MFR #STDV5804NT4G

FPN#STDV5804NT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 69A (Tc) TO-252-3 T/R
Datasheet
61071-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTDV5804N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2850pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current69A (Tc)
Maximum Drain to Source Resistance7.5 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation71W (Tc)
Maximum Pulse Drain Current125A
Maximum Total Gate Charge45nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12.6nC
Typical Gate to Source Charge10nC