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SMMBT5551LT3G
onsemi

SMMBT5551LT3G

MFR #SMMBT5551LT3G

FPN#SMMBT5551LT3G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
60564-Datasheet
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT5551L
Packaging TypeTape and Reel
Packaging Quantity10000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage160V
Maximum Collector Emitter Saturation Voltage200mV @ 5mA, 50mA
Maximum Cutoff Collector Current50nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain80 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle