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Vishay

SIHS36N50D-GE3

MFR #SIHS36N50D-GE3

FPN#SIHS36N50D-GE3-FL

MFRVishay

Part DescriptionMOSFET N-Channel 500V 36A(Tc) 446W(Tc) Through Hole, TO-247-3
Datasheet
213402-Datasheet
Quote Only
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSIHS36N50D
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeTO-247AC
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance3233pF
Input Capacitance Test Voltage100V
Maximum Continuous Drain Current36A (Tc)
Maximum Drain to Source Resistance130 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation446W (Tc)
Maximum Pulse Drain Current112A
Maximum Total Gate Charge125nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge37nC
Typical Gate to Source Charge23nC