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Vishay

SI7456DP-T1-GE3

MFR #SI7456DP-T1-GE3

FPN#SI7456DP-T1-GE3-FL

MFRVishay

Part DescriptionMOSFET N-Channel 100V 5.7A(Ta) 1.9W(Ta) Surface Mount, 8-DFN
Datasheet
217729-Datasheet
Quote Only
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Multiples of: 6000
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI7456DP
Packaging TypeN/A
Packaging QuantityN/A
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypePowerPAK® SO-8
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Maximum Continuous Drain Current5.7A (Ta)
Maximum Drain to Source Resistance25 mOhm @ 9.3A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.9W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge44nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.6nC
Typical Gate to Source Charge10nC