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Vishay

SI7317DN-T1-GE3

MFR #SI7317DN-T1-GE3

FPN#SI7317DN-T1-GE3-FL

MFRVishay

Part DescriptionMOSFET P-Channel 150V 1.1A (Ta), 2.8A (Tc) 8-SON T/R
Datasheet
217756-Datasheet
Quote Only
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI7317DN
Packaging TypeTape and Reel
Packaging QuantityN/A
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusContact Supplier
Package TypePowerPAK® 1212-8
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance365pF
Input Capacitance Test Voltage75V
Maximum Continuous Drain Current1.1A (Ta), 2.8A (Tc)
Maximum Drain to Source Resistance1.2 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.2W (Ta), 19.8W (Tc)
Maximum Pulse Drain Current2A
Maximum Total Gate Charge9.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge1.5nC