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Vishay

SI7113DN-T1-GE3

MFR #SI7113DN-T1-GE3

FPN#SI7113DN-T1-GE3-FL

MFRVishay

Part DescriptionMOSFET P-Channel 100V 13.2A(Tc) 3.7W(Ta) 52W(Tc) Surface Mount, 8-DFN
Datasheet
60330-Datasheet
Quote Only
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Multiples of: 6000
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI7113DN
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypePowerPAK® 1212-8
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1480pF
Input Capacitance Test Voltage50V
Maximum Continuous Drain Current3.5A (Ta), 13.2A (Tc)
Maximum Drain to Source Resistance134 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.7W (Ta), 52W (Tc)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-50°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge4.7nC