loading content
SI4925BDY-T1-E3
Vishay

SI4925BDY-T1-E3

MFR #SI4925BDY-T1-E3

FPN#SI4925BDY-T1-E3-FL

MFRVishay

Datasheet
217126-Datasheet
Quote Only
more info
Multiples of: 2500
more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI4925BDY
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Maximum Continuous Drain Current5.3A
Maximum Drain to Source Resistance25 mOhm @ 7.1A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.1W
Maximum Pulse Drain Current40A
Maximum Total Gate Charge50nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.9nC
Typical Gate to Source Charge5.4nC