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SI2307BDS-T1-E3
Vishay

SI2307BDS-T1-E3

MFR #SI2307BDS-T1-E3

FPN#SI2307BDS-T1-E3-FL

MFRVishay

Datasheet
217712-Datasheet
Quote Only
more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSi2307BDS
Packaging TypeTape and Reel
Packaging QuantityN/A
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSOT-23-3 (TO-236)
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance380pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current2.5A (Ta)
Maximum Drain to Source Resistance78 mOhm @ 3.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation750mW (Ta)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.4nC
Typical Gate to Source Charge1.4nC