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SI2301BDS-T1-E3
Vishay

SI2301BDS-T1-E3

MFR #SI2301BDS-T1-E3

FPN#SI2301BDS-T1-E3-FL

MFRVishay

Part DescriptionP-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet
60147-Datasheet
Quote Only
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSi2301BDS
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Affected
Package TypeSOT-23-3 (TO-236)
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance375pF
Input Capacitance Test Voltage6V
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance100 mOhm @ 2.8A, 4.5V
Maximum Gate to Source Threshold Voltage950mV @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.1nC
Typical Gate to Source Charge700pC