loading content
Vishay

SI1026X-T1-GE3

MFR #SI1026X-T1-GE3

FPN#SI1026X-T1-GE3-FL

MFRVishay

Datasheet
218733-Datasheet
Quote Only
more info
Multiples of: 3000
more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI1026X
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSC-89-6 (SOT-563F)
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance30pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current305mA
Maximum Drain to Source Resistance1.4 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation250mW
Maximum Pulse Drain Current650A
Maximum Total Gate Charge600pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge225pC
Typical Gate to Source Charge120pC