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Vishay

SI1012R-T1-GE3

MFR #SI1012R-T1-GE3

FPN#SI1012R-T1-GE3-FL

MFRVishay

Datasheet
217787-Datasheet
Quote Only
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI1012R
Packaging TypeTape and Reel
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSC-75A
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±6V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Maximum Continuous Drain Current500mA (Ta)
Maximum Drain to Source Resistance700 mOhm @ 600mA, 4.5V
Maximum Gate to Source Threshold Voltage900mV @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation250mW (Ta)
Maximum Pulse Drain Current1kA
Maximum Total Gate Charge750pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge225nC
Typical Gate to Source Charge75pC