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SBCW66GLT1G
MFR #SBCW66GLT1G
FPN#SBCW66GLT1G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | SBCW66GLT1G |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Configuration | NPN |
Gain Bandwidth | 100MHz |
Life Cycle Status | Active |
Maximum Collector Current | 800mA |
Maximum Collector Emitter Breakdown Voltage | 45V |
Maximum Collector Emitter Saturation Voltage | 700mV @ 50mA, 500mA |
Maximum Cutoff Collector Current | 20nA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 300mW |
Minimum DC Current Gain | 160 @ 100mA, 1V |
Minimum Operating Temperature | -55°C (TJ) |
Package Type | SOT-23-3 (TO-236) |
Technology Type | SI |
Transistor Type | Single |