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Infineon
S29GL512T10FHI023
MFR #S29GL512T10FHI023
FPN#S29GL512T10FHI023-FL
MFRInfineon
Part DescriptionFLASH - NOR 512Mbit 64M x 8 2.7V - 3.6V Parallel 100ns 60ns, 64-FBGA
Legacy ManufacturerCypress Semiconductor
Datasheet
Quote Only
Product Attributes
| Main Category | Memory |
| Category | Memory ICs |
| Sub Category | Flash Memories |
| Family Name | S29GL512T |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1600 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Address Bus Width | 25Bits |
| Block Configuration | Uniform |
| Command Compatible | Yes |
| Interface Type | CFI |
| Life Cycle Status | Active |
| Maximum Access Time | 100ns |
| Maximum Chip Erase Time | 1792s |
| Maximum Clock Frequency | N/A |
| Maximum Operating Temperature | 85°C (TA) |
| Maximum Supply Erase Current | 100mA |
| Maximum Supply Program Current | 100mA |
| Maximum Supply Read Current | 60mA |
| Maximum Supply Voltage | 3.6V |
| Memory Size | 512Mbit |
| Minimum Operating Temperature | -40°C (TA) |
| Minimum Supply Voltage | 2.7V |
| Organization | 32M x 16, 64M x 8 |
| Package Type | 64-FBGA (13x11) |
| Technology | FLASH - NOR (SLC) |
| Timing Type | Asynchronous |
| Write Cycle Time | 60ns |
