Infineon
S26HS512TGABHI010
MFR #S26HS512TGABHI010
FPN#S26HS512TGABHI010-FL
MFRInfineon
Part DescriptionFLASH - NOR Memory IC 512Mb (64M x 8) SPI 200 MHz 24-FBGA (6x8)
Legacy ManufacturerCypress Semiconductor
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Integrated Circuits (ICs) |
| Sub Category | Memory ICs |
| Family Name | S26HS512T |
| Packaging Type | Tray |
| Packaging Quantity | 338 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | 24-FBGA (6x8) |
| Address Bus Width | N/A |
| Block Configuration | Top/Bottom Boot |
| Command Compatible | Yes |
| Endurance | 1,280,000 Cycles |
| Interface Type | HyperBus |
| Maximum Access Time | 5.45ns |
| Maximum Chip Erase Time | 696s |
| Maximum Clock Frequency | 200MHz |
| Maximum Operating Temperature | 85°C (TA) |
| Maximum Supply Erase Current | 55mA |
| Maximum Supply Program Current | 58mA |
| Maximum Supply Read Current | 173mA |
| Maximum Supply Voltage | 2V |
| Memory Size | 512Mbit |
| Minimum Operating Temperature | -40°C (TA) |
| Minimum Supply Voltage | 1.7V |
| Organization | 64M x 8 |
| Technology | FLASH - NOR (SLC) |
| Timing Type | Asynchronous, Synchronous |
| Write Cycle Time | 1.7ms |