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onsemi

NXH80B120H2Q0SG

MFR #NXH80B120H2Q0SG

FPN#NXH80B120H2Q0SG-FL

MFRonsemi

Part DescriptionIGBT Modules PIM 1200V 40A DU BST SiC DIODE
Datasheet
57211-Datasheet
Quote Onlymore info
Multiples of: 24more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH80B120H2Q0
Packaging TypeTray
Packaging Quantity24
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationDual Boost Chopper
IGBT TypeN/A
Input Capacitance9700pF @ 25V
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current41A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.5V @ 15V, 40A
Maximum Cutoff Collector Current200µA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation200mW
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package Type22-PIM/Q0BOOST (55x32.5)