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onsemi

NXH50C120L2C2ES1G

MFR #NXH50C120L2C2ES1G

FPN#NXH50C120L2C2ES1G-FL

MFRonsemi

Part DescriptionIGBT Module Three Phase Inverter with Brake 1200 V 50 A 20 mW Through Hole 26-DIP
Datasheet
99204-Datasheet
Quote Onlymore info
Multiples of: 6more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH50C120L2C2ES1G
Packaging TypeTube
Packaging Quantity6
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationThree Phase Inverter with Brake
IGBT TypeN/A
Input Capacitance11897pF @ 20V
Input TypeThree Phase Bridge Rectifier
Life Cycle StatusObsolete
Maximum Collector Current50A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.4V @ 15V, 50A
Maximum Cutoff Collector Current250µA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation20mW
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package Type26-DIP