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onsemi

NXH100B120H3Q0PG

MFR #NXH100B120H3Q0PG

FPN#NXH100B120H3Q0PG-FL

MFRonsemi

Part DescriptionPIM 60-80KW Q0BOOST-L57 1200V, 1
Datasheet
165221-Datasheet
Quote Onlymore info
Multiples of: 24more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH100B120H3Q0
Packaging TypeTray
Packaging Quantity24
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package Type22-PIM (55x32.5)
Configuration2 Independent
IGBT TypeTrench Field Stop
Input Capacitance9075pF @ 20V
Input TypeStandard
Maximum Collector Current61A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.3V @ 15V, 50A
Maximum Cutoff Collector Current200µA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation186W
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
NTC ThermistorNo