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NX2301P,215
NXP

NX2301P,215

MFR #NX2301P,215

FPN#NX2301P,215-FL

MFRNXP

Part DescriptionP-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount, SOT-23
Datasheet
57191-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNX2301P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance380pF
Input Capacitance Test Voltage6V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current2A (Ta)
Maximum Drain to Source Resistance120 mOhm @ 1A, 4.5V
Maximum Gate to Source Threshold Voltage1.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation400mW (Ta), 2.8W (Tc)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge6nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge900pC
Typical Gate to Source Charge1.1nC