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NVTFWS030N06CTAG
MFR #NVTFWS030N06CTAG
FPN#NVTFWS030N06CTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 6A(Ta) 19A(Tc) 2.5W(Ta) 23W(Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVTFS030N06C |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 255pF |
| Input Capacitance Test Voltage | 30V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 6A (Ta), 19A (Tc) |
| Maximum Drain to Source Resistance | 29.7 mOhm @ 3A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 13µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.5W (Ta), 23W (Tc) |
| Maximum Pulse Drain Current | 86A |
| Maximum Total Gate Charge | 4.7nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-WDFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 540pC |
| Typical Gate to Source Charge | 1.7nC |
