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NVTFWS030N06CTAG
MFR #NVTFWS030N06CTAG
FPN#NVTFWS030N06CTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 6A(Ta) 19A(Tc) 2.5W(Ta) 23W(Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVTFS030N06C |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 255pF |
Input Capacitance Test Voltage | 30V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 6A (Ta), 19A (Tc) |
Maximum Drain to Source Resistance | 29.7 mOhm @ 3A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 13µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 2.5W (Ta), 23W (Tc) |
Maximum Pulse Drain Current | 86A |
Maximum Total Gate Charge | 4.7nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-WDFN (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 540pC |
Typical Gate to Source Charge | 1.7nC |