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NVTFWS024N06CTAG
MFR #NVTFWS024N06CTAG
FPN#NVTFWS024N06CTAG-FL
MFRonsemi
Part DescriptionN-Channel 60 V 7A (Ta), 24A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVTFS024N06C | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 1500 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 60V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 333pF | 
| Input Capacitance Test Voltage | 30V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 7A (Ta), 24A (Tc) | 
| Maximum Drain to Source Resistance | 22.6 mOhm @ 3A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 20µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 2.5W (Ta), 28W (Tc) | 
| Maximum Pulse Drain Current | 112A | 
| Maximum Total Gate Charge | 5.7nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | 8-WDFN (3.3x3.3) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 680pC | 
| Typical Gate to Source Charge | 2nC | 
