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NVTFS4C10NWFTAG
onsemi

NVTFS4C10NWFTAG

MFR #NVTFS4C10NWFTAG

FPN#NVTFS4C10NWFTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 15.3A (Ta), 47A (Tc) 8-SON T/R
Datasheet
100897-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFS4C10N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance993pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current15.3A (Ta), 47A (Tc)
Maximum Drain to Source Resistance7.4 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3W (Ta), 28W (Tc)
Maximum Pulse Drain Current196A
Maximum Total Gate Charge19.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.1nC
Typical Gate to Source Charge6.1nC