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NVMJS1D7N04CTWG
onsemi

NVMJS1D7N04CTWG

MFR #NVMJS1D7N04CTWG

FPN#NVMJS1D7N04CTWG-FL

MFRonsemi

Part DescriptionMOSFET N-CH 40V 35A/185A 8LFPAK
Datasheet
164616-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMJS1D7N04C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-LFPAK
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3300pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current35A (Ta), 185A (Tc)
Maximum Drain to Source Resistance1.7 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 130µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 106W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge47nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge16nC