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NVMFWD027N10MCLT1G
onsemi

NVMFWD027N10MCLT1G

MFR #NVMFWD027N10MCLT1G

FPN#NVMFWD027N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 100V 7.4A (Ta), 28A (Tc) 8-SON
Datasheet
99152-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD027N10MCL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance720pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current7.4A (Ta), 28A (Tc)
Maximum Drain to Source Resistance26 mOhm @ 7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 38µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 46W (Tc)
Maximum Pulse Drain Current115A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge2nC