_medium_204x204px.png)
NVMFWD024N06CT1G
MFR #NVMFWD024N06CT1G
FPN#NVMFWD024N06CT1G-FL
MFRonsemi
Part DescriptionMosfet Array 2 N-Channel (Dual) 60V 8A (Ta), 24A (Tc) 3.1W (Ta), 28W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVMFD024N06C |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 333pF |
Input Capacitance Test Voltage | 30V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 8A (Ta), 24A (Tc) |
Maximum Drain to Source Resistance | 22.6 mOhm @ 3A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 20µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.1W (Ta), 28W (Tc) |
Maximum Pulse Drain Current | 85A |
Maximum Total Gate Charge | 5.7nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 680pC |
Typical Gate to Source Charge | 2nC |