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NVMFS6H852NT1G
onsemi

NVMFS6H852NT1G

MFR #NVMFS6H852NT1G

FPN#NVMFS6H852NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 80V 10A (Ta), 40A (Tc) 5-SON
Datasheet
57119-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS6H852N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance760pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Ta), 40A (Tc)
Maximum Drain to Source Resistance14.2 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage4V @ 45µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 54W (Tc)
Maximum Pulse Drain Current200A
Maximum Total Gate Charge13nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.3nC
Typical Gate to Source Charge4.2nC