
NVMFS5C670NWFT1G
MFR #NVMFS5C670NWFT1G
FPN#NVMFS5C670NWFT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 17A (Ta) 71A (Tc) 3.6W (Ta) 61W (Tc) Surface Mount, 5-DFNW
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVMFS5C670N |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1035pF |
Input Capacitance Test Voltage | 30V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 17A (Ta), 71A (Tc) |
Maximum Drain to Source Resistance | 7 mOhm @ 11A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 53µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.6W (Ta), 61W (Tc) |
Maximum Pulse Drain Current | 440A |
Maximum Total Gate Charge | 14.4nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 1.5nC |
Typical Gate to Source Charge | 5.3nC |