
NVMFS5C604NLWFT1G
MFR #NVMFS5C604NLWFT1G
FPN#NVMFS5C604NLWFT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W (Tc) Surface Mount, 5-DFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVMFS5C604NL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1500 |
| Lifecycle Status | Active (NRND) |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 8900pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 40A (Ta), 287A (Tc) |
| Maximum Drain to Source Resistance | 1.2 mOhm @ 50A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.9W (Ta), 200W (Tc) |
| Maximum Pulse Drain Current | 900A |
| Maximum Total Gate Charge | 120nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 12.7nC |
| Typical Gate to Source Charge | 21.4nC |
