NVMFS5C430NLWFAFT1G
MFR #NVMFS5C430NLWFAFT1G
FPN#NVMFS5C430NLWFAFT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 40V 38A (Ta), 200A (Tc), Surface Mount 5-DFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVMFS5C430NL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1500 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 40V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4300pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 38A (Ta), 200A (Tc) |
| Maximum Drain to Source Resistance | 1.4 mOhm @ 50A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.8W (Ta), 110W (Tc) |
| Maximum Pulse Drain Current | 900A |
| Maximum Total Gate Charge | 70nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 9nC |
| Typical Gate to Source Charge | 12nC |