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NVMFS5C410NLAFT1G-01
onsemi

NVMFS5C410NLAFT1G-01

MFR #NVMFS5C410NLAFT1G-01

FPN#NVMFS5C410NLAFT1G-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 46A (Ta), 300A (Tc) 8-SON
Datasheet
100654-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS5C410N
Lifecycle StatusActive
ROHSCompliant, Compliant with Exemption
RoHs Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6100pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete (Unconfirmed)
Maximum Continuous Drain Current46A (Ta), 300A (Tc)
Maximum Drain to Source Resistance920 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.9W (Ta), 166W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge86nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge28nC