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NVMFS014P04M8LT1G
MFR #NVMFS014P04M8LT1G
FPN#NVMFS014P04M8LT1G-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 40V 12.5A (Ta), 52.1A (Tc) 8-SON T/R
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVMFS014P04M8L |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 40V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1734pF |
Input Capacitance Test Voltage | 20V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 12.5A (Ta), 52.1A (Tc) |
Maximum Drain to Source Resistance | 13.8 mOhm @ 15A, 10V |
Maximum Gate to Source Threshold Voltage | 2.4V @ 420µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.6W (Ta), 60W (Tc) |
Maximum Pulse Drain Current | 268A |
Maximum Total Gate Charge | 26.5nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 5-DFN (5x6) (8-SOFL) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.8nC |
Typical Gate to Source Charge | 5.6nC |