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NVMFD5C478NT1G
onsemi

NVMFD5C478NT1G

MFR #NVMFD5C478NT1G

FPN#NVMFD5C478NT1G-FL

MFRonsemi

Part DescriptionMOSFET Array 40V 9.8A (Ta) 27A (Tc) 3.1W (Ta) 23W (Tc) Surface Mount, 8-DFN
Datasheet
100796-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD5C478N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance325pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current9.8A (Ta), 27A (Tc)
Maximum Drain to Source Resistance17 mOhm @ 7.5A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 23W (Tc)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge6.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.2nC
Typical Gate to Source Charge2nC