(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVMFD5852NLT1G
onsemi

NVMFD5852NLT1G

MFR #NVMFD5852NLT1G

FPN#NVMFD5852NLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 40V 15A 8-SON T/R
Datasheet
150201-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD5852NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1800pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A
Maximum Drain to Source Resistance6.9 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.2W
Maximum Pulse Drain Current329A
Maximum Total Gate Charge36nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10.9nC
Typical Gate to Source Charge5.5nC